STW13NM60N データシートの表示（PDF） - STMicroelectronics

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STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STMicroelectronics 

STF/I/P/U/W13NM60N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 300 V, ID = 5.5 A

RG = 4.7 Ω VGS = 10 V

(see Figure 19)

Min. Typ. Max. Unit

3

ns

8

ns

-

-

30

ns

10

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 11 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V

-

(see Figure 21)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 11 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

-

(see Figure 21)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

11 A

44 A

1.5 V

230

ns

2

µC

18

A

290

ns

190

µC

17

A

Doc ID 15420 Rev 5

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