STW13NM60N データシートの表示（PDF） - STMicroelectronics

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STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STF/I/P/U/W13NM60N

(TCASE = 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Test conditions

Drain-source

V(BR)DSS breakdown voltage (VGS = 0) ID = 1 mA

Zero gate voltage

IDSS drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC=125 °C

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

VGS(th) Gate threshold voltage

VDS = VGS, ID = 250 µA

Static drain-source

RDS(on) on-resistance

VGS = 10 V, ID = 5.5 A

Min. Typ. Max. Unit

600

V

1 µA

100 µA

±0.1 µA

2

3

4

V

0.28 0.36 Ω

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

790

pF

- 60 - pF

3.6

pF

Coss eq. (1)

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

- 135 - pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 480 V, ID = 11 A,

VGS = 10 V,

(see Figure 20)

27

nC

-

4

- nC

14

nC

RG Gate input resistance

f=1 MHz open drain

- 4.7 - Ω

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

4/21

Doc ID 15420 Rev 5

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