T15V2M16B データシートの表示（PDF） - Taiwan Memory Technology

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T15V2M16B

128K X 16 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15V2M16B

AC CHARACTERISTICS(Vcc=2.7 to 3.6V, VSS = 0V, Ta = -10 ~ +70 °C / -40°C ~ 85°C)

(1) READ CYCLE

PARAMETER

SYM. -45

Min Max

Read Cycle Time

tRC 45 -

Address Access Time

tAA

- 45

Chip Enable Access Time

tACE - 45

Output Enable Access Time

tOE

- 25

Output Hold from Address Change tOH 10 -

Chip Enable to Output in Low-Z

tLZ

10 -

Chip Disable to Output in High-Z

tHZ

- 15

Output Enable to Output in Low-Z

tOLZ

5

-

Output Disable to Output in High-Z tOHZ - 15

LB , UB Access Time

tBA

- 45

LB , UB Enable to Output in Low-Z tBLZ 10 -

LB , UB Disable to Output in

High-Z

tBHZ - 15

-55

Min Max

55 -

- 55

- 55

- 30

10 -

10 -

- 20

5-

- 20

- 55

10 -

- 20

-70

Min Max

70 -

- 70

- 70

- 35

10 -

10 -

- 25

5-

- 25

- 70

10 -

- 25

-100 UNIT

Min Max

100 - ns

- 100 ns

- 100 ns

- 50 ns

10 - ns

10 - ns

- 30 ns

5 - ns

- 30 ns

- 100 ns

10 - ns

- 30 ns

(2)WRITE CYCLE

PARAMETER

Write Cycle Time

Chip Enable to Write End

Address Valid to Write End

Address Setup Time

Write Pulse Width

Write Recovery Time

Data Valid to Write End

Data Hold Time

Write Enable to Output in High-Z

Output Active from Write End

SYM.

tWC

tCW

tAW

tAS

tWP

tWR

tDW

tDH

tWHZ

tOW

-45

Min Max

45 -

35 -

35 -

0-

30 -

0-

20 -

0-

- 15

5-

-55

Min Max

55 -

50 -

50 -

0-

45 -

0-

25 -

0-

- 20

5-

-70

Min Max

70 -

60 -

60 -

0-

50 -

0-

30 -

0-

- 25

5-

-100

Min Max

100 -

80 -

80 -

0-

70 -

0-

40 -

0-

- 30

5-

UNIT

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

TM Technology Inc. reserves the right

P. 6

to change products or specifications without notice.

Publication Date: NOV. 2002

Revision:A

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