SST38VF166-70-4C-EK データシートの表示（PDF） - Silicon Storage Technology
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SST38VF166-70-4C-EK Datasheet PDF : 50 Pages
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16 Megabit FlashBank Memory
SST38VF166
Data Sheet
AC CHARACTERISTICS
TABLE 21: READ CYCLE TIMING PARAMETERS
SST38VF166-70
Symbol
Parameter
Min
Max
Units
TRC
TBE
TAA
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Read Cycle Time
Bank Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
70
70
70
30
0
0
20
20
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T21.1 327
TABLE 22: WRITE, ERASE, PROGRAM CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TWC
TBPE
Word-Write Cycle (Erase and Program)
Word-Program Time - E2 Bank
12.5
ms
40
µs
TBPF
Word-Program Time - Flash Bank
20
µs
TSEF
Sector-Erase Time - Flash Bank
25
ms
TLEF
Block-Erase Time - Flash Bank
25
ms
TBEF
TSEE
TBEE
Bank-Erase Time - Flash Bank
Sector-Erase Time - E2 Bank
Bank-Erase Time - E2 Bank
100
ms
12.5
ms
100
ms
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
40
ns
TBES
BE# Setup Time
0
ns
TBEH
BE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
0
ns
TWP
Write Pulse Low Width
40
ns
TWPH
Write Pulse High Time
30
ns
TDS
Data Setup Time
40
ns
TDH
TVDDR1
Data Hold Time
VDD Rise Time
0
ns
0.1
50
ms
TDBR
Time to DATA# Polling Read
35
ns
TTBR
Time to Toggle Bit Read
35
ns
TIDA
Time to ID or CFI Read/Exit Cycle
150
ns
TBS
Bank Enable Setup Time for Concurrent Operation
0
ns
T22.0 327
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
17
327-3 2/01
S71065
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