JANKCA1N5554US データシートの表示（PDF） - Unspecified

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JANKCA1N5554US

SEMICONDUCTOR DEVICE, DIODE,SILICON, POWER, RECTIFIER

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MIL-PRF-19500/420H

4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test

method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with group E herein and shall be

included in the qualification report. Forced moving air or draft shall not be permitted across the devices during

test. The maximum limit under these test condition shall be RθJL ≤ 22°C/W for L = .375 (9.53 mm);

RθJEC ≤ 11°C/W for L= 0 (US version). The following conditions shall apply:

a. IH ............................. 2 A minimum.

b. tH ............................. Thermal equilibrium.

c. IM ............................. 1.0 mA to 10 mA.

d. tMD ............................. 100 µs maximum.

The device shall be allowed to reach equilibrium at current IH before the measurement shall be made (tH ≥ 25 sec).

LS = Lead spacing = .375 inch (9.53 mm) minimum for leaded devices and LS = 0 minimum for unleaded devices as

defined (see figure 8):

FIGURE 8. Mounting arrangement.

4.5.5 Peak reverse power test. A 20 microsecond half-sine waveform of current shall be used and peak reverse

power shall be determined by the product of peak reverse voltage and peak reverse current. A 20 microsecond

square waveform may also be used with the approval of the qualifying activity (see figure 9).

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