IS61C1024AL-12HI データシートの表示（PDF） - Integrated Silicon Solution

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IS61C1024AL-12HI

128K x 8 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C1024AL, IS64C1024AL

ISSI ®

IS61C1024AL/IS64C1024AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

-12 ns

Min. Max.

-15 ns

Min. Max.

Unit

ICC1 VDD Operating

Supply Current

VDD = VDD MAX., CE1 = VIL

IOUT = 0 mA, f = 0

Com.

Ind.

Auto.

— 35

— 40

mA

— 45

ICC2

VDD Dynamic Operating

VDD = VDD MAX., CE1 = VIL

Supply Current

IOUT = 0 mA, f = fMAX

Com.

Ind.

Auto.

typ.(2)

— 45

— 50

— 32

mA

— 55

ISB1 TTL Standby Current

(TTL Inputs)

VDD = VDD MAX.,

VIN = VIH or VIL

CE1 ≥ VIH, f = 0 or

CE2 ≤ VIL, f = 0

Com.

Ind.

Auto.

—

1

— 1.5

mA

—2

ISB2 CMOS Standby

VDD = VDD MAX.,

Current (CMOS Inputs) CE1 ≥ VDD – 0.2V,

CE2 ≤ 0.2V

VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

Auto.

typ.(2)

— 400

— 450

— 200

µA

— 500

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

4

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. B

01/24/05

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