GB200TS60NPBF データシートの表示（PDF） - Vishay Semiconductors
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GB200TS60NPBF Datasheet PDF : 9 Pages
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GB200TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 209 A
100
90
10 ohm
80
70
27 ohm
60
50
47 ohm
40
30
20
40
80
120
160
200
IF (A)
Fig. 11 - Typical Diode Irr vs. IF
TJ = 125 °C
100
90
80
70
60
50
40
30
0
10
20
30
40
50
RG (Ω)
Fig. 12 - Typical Diode Irr vs. Rg
TJ = 125 °C, IF = 200 A
100
90
80
70
60
50
600 700 800 900 1000 1100 1200 1300
dIF / dt (A/μs)
Fig. 13 - Typical Diode Irr vs. dIF/dt
TJ = 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
5
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 14 - Typical Switching Losses vs. Gate Resistance
TJ = 125 °C, L = 200 μH, Rg = 10 Ω,
VCC = 360 V, VGE = 15 V
100
Ic = 200A
10
Ic = 100A
Ic = 50A
1
0
25
50
75
100 125
TJ - Junction Temperature (°C)
Fig. 15 - Typical Switching Losses vs.
Junction Temperature;
L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V
12
11
10
9
8
7
6
5
4
3
2
40 60 80 100 120 140 160 180 200 220
IC (A)
Fig. 16 - Typical Switching Losses vs.
Collector to Emitter Current;
TJ = 125 °C,Rg1 = 10 Ω, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
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