GB200TS60NPBF データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
一致するリスト
GB200TS60NPBF Datasheet PDF : 9 Pages
| |||
GB200TS60NPbF
INT-A-PAK "Half-Bridge" Vishay High Power Products
(Ultrafast Speed IGBT), 209 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
RthCS
Mounting torque
case to heatsink
case to terminal 1, 2, 3
Weight
MIN.
- 40
-
-
-
-
-
-
TYP.
-
0.13
0.19
0.1
-
-
185
MAX.
150
0.16
0.32
-
4
3
-
UNITS
°C
°C/W
Nm
g
300
Vge = 18V
250 Vge = 15V
Vge = 12V
200
150
Vge = 9V
100
50
0
0
1
2
3
4
VCE (V)
Fig. 1 - Typical IGBT Output Characteristics
TJ = 25 °C, tp = 500 μs
300
Vge = 18V
250 Vge = 15V
Vge = 12V
200
150
Vge = 9V
100
50
0
0
1
2
3
4
5
VCE (V)
Fig. 2 - Typical IGBT Output Characteristics
TJ = 125 °C, tp = 500 μs
300
250
200
150
100
Tj = 125°C
50
Tj = 25°C
0
0123456789
VGE (V)
Fig. 3 - Typical Transfer Characteristics
VCE = 20 V, tp = 500 μs
3.5
Ic = 200A
3
2.5
Ic = 100A
2
Ic = 50A
1.5
1
0
40
80
120
160
TJ, Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: indmodules@vishay.com
www.vishay.com
3
Share Link: 