BC857BDW1T1 データシートの表示（PDF） - ON Semiconductor

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BC857BDW1T1

Dual General Purpose Transistors

ON Semiconductor 

BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series

1.0

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01 0.01

SINGLE PULSE

0.001

0

1.0

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

ZqJA(t) = r(t) RqJA

RqJA = 328°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

10

100

1.0 k

10 k

t, TIME (ms)

Figure 13. Thermal Response

100 k

1.0 M

−200

1s

3 ms

−100

−50

TA = 25°C TJ = 25°C

BC558

−10

BC557

BC556

−5.0

−2.0

−1.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

−5.0 −10

−30 −45 −65 −100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

The safe operating area curves indicate IC−VCE limits

of the transistor that must be observed for reliable opera-

tion. Collector load lines for specific circuits must fall be-

low the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse curves

are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.

TJ(pk) may be calculated from the data in Figure 13. At high

case or ambient temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by the secondary breakdown.

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