BC857BDW1T1 データシートの表示（PDF） - ON Semiconductor
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BC857BDW1T1 Datasheet PDF : 6 Pages
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BC856BDW1T1,
BC857BDW1T1 Series,
BC858BDW1T1 Series
Preferred Devices
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
• Device Marking:
BC856BDW1T1 = 3B
BC857BDW1T1 = 3F
BC857CDW1T1 = 3G
BC858BDW1T1 = 3K
BC858CDW1T1 = 3L
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Continuous
Symbol BC856 BC857 BC858 Unit
VCEO
VCBO
VEBO
IC
−65
−80
−5.0
−100
−45
−50
−5.0
−100
−30
−30
−5.0
−100
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
PD
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
http://onsemi.com
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
6 54
1
23
SOT−363/SC−88
CASE 419B
Style 1
DEVICE MARKING
3xm
See Table
3x = Specific Device Code
x = B, F, G, K, L
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BC856BDW1T1 SOT−363 3000 Units/Reel
BC857BDW1T1 SOT−363 3000 Units/Reel
BC857CDW1T1 SOT−363 3000 Units/Reel
BC858BDW1T1 SOT−363 3000 Units/Reel
BC858CDW1T1 SOT−363 3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
BC856BDW1T1/D
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