2N3906-G データシートの表示（PDF） - ComChip

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2N3906-G

General Purpose transistor

ComChip 

General Purpose Transistor

SMD Diodes Specialist

O

Electrical Characteristics (at TA=25 C unless otherwise noted)

Parameter

Conditions

Symbol Min

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

IC =-100μA , IE=0

IC =-1mA , IB=0

IE =-100μA , IC=0

VCB=-40V , IE=0

VCE=-40V , IB=0

V(BR)CBO

-40

V(BR)CEO

-40

V(BR)EBO

-5

ICBO

ICEO

Emitter cut-off current

VEB=-5V , IC=0

IEBO

DC current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Output capacitance

Input capacitance

Noise figure

Transition frequency

Delay time

Rise time

Storage time

VCE=-1V , IC=-0.1mA

VCE=-1V , IC=-1mA

VCE=-1V , IC=-10mA

VCE=-1V , IC=-50mA

VCE=-1V , IC=-100mA

IC=-10mA , IB=-1mA

IC=-50mA , IB=-5mA

IC=-10mA , IB=-1mA

IC=-50mA , IB=-5mA

VCB=-5V , IE=0 , f=100KHz

VEB=-0.5V , IE=0 , f=100KHz

VCE=-5V , IC=100μΑ

F=1KHz , RS=1KΩ

VCE=-20V , IC=-10mA

f=100MHz

VCC=-3V , VBE=-0.5V

IC=-10mA , IB1=-1mA

VCC=-3V , IC=-10mA

hFE(1)

hFE(2)

hFE(3)

hFE(4)

hFE(5)

VCE(sat)

60

80

100

60

30

VBE(sat)

-0.65

Cobo

Cibo

NF

fT

250

td

tr

ts

Fall time

IB1=IB2=-1mA

tf

Max

-0.1

-0.1

-0.1

300

-0.25

-0.4

-0.85

-0.95

4.5

10

4

35

35

225

75

Unit

V

V

V

µA

µA

µA

V

V

V

V

pF

pF

dB

MHz

nS

nS

nS

nS

Classification of hFE(3)

Rank

Range

O

100-200

Y

200-300

G

300-400

QW-BTR05

REV:A

Page 2

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