2N3906-G データシートの表示（PDF） - ComChip

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2N3906-G

General Purpose transistor

ComChip 

General Purpose Transistor

2N3906-G (PNP)

RoHS Device

SMD Diodes Specialist

Features

-PNP silicon epitaxial planar transistor for

switching and amplifier application.

-As complementary type, the NPN transistor

2N3904-G is recommended.

-This transistor is available in the SOT-23

case with the type designation MMBT3906-G.

Collector

3

2

Base

1

Emitter

TO-92

0.1 85(4.70 )

0.1 73(4.40 )

0.020(0.51)

0.014(0.36)

0.0 22(0.55 )

0.0 15(0.38 )

0.135(3.43) Min.

0.055(1.14)

0.043(1.10)

0.015(0.38) Max.

0.063(1.60) Max.

0.0 50(1.27 ) Typ.

0.1 04(2.64 )

0.0 96(2.44 )

123

1. Emitter

2. Base

3. Collector

Dimensions in inches and (millimeter)

Maximum Ratings(TA=25oC unless otherwise noted)

Parameter

Symbol

Min

Max

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current-Continuous

VCBO

VCEO

VEBO

IC

-40

-40

-5

-0.2

Col lec tor di ssipa tion

St or ag e tempe rat ur e an d jun ction tempe rat ur e

PC

TSTG , TJ

-55

0. 62 5

+1 50

Unit

V

V

V

A

W

O

C

QW-BTR05

REV:A

Page 1

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