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XN0A312 データシートの表示(PDF) - Panasonic Corporation

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XN0A312
Panasonic
Panasonic Corporation Panasonic
XN0A312 Datasheet PDF : 5 Pages
1 2 3 4 5
XN0A312
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high-level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 k
4.9
V
Output voltage low-level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 k
0.2
V
Input resistance
R1
30% 22 +30% k
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.2 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 22 +30% k
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00115BED

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