XN0A312 データシートの表示（PDF） - Panasonic Corporation

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XN0A312

Composite Transistors

Panasonic Corporation 

Composite Transistors

XN0A312 (XN1A312)

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For switching/digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2212 (UN2212) + UNR2112 (UN2112)

■ Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Tr1

Collector-base voltage

VCBO

50

V

(Emitter open)

Collector-emitter voltage VCEO

50

V

(Base open)

Collector current

IC

100

mA

Tr2

Collector-base voltage

VCBO

−50

V

(Emitter open)

Collector-emitter voltage VCEO

−50

V

(Base open)

Overall

Collector current

Total power dissipation

Junction temperature

Storage temperature

IC

−100

mA

PT

300

mW

Tj

150

°C

Tstg −55 to +150 °C

2.90+–00..0250

1.9±0.1

(0.95) (0.95)

3

4

5

2

1

0.30+–00..0150

10˚

Unit: mm

0.16+–00..0160

1: Collector (Tr1)

Base (Tr2)

2: Collector (Tr2)

EIAJ: SC-74A

3: Emitter (Tr2)

4: Base (Tr1)

5: Emitter (Tr1)

Mini5-G1 Package

Marking Symbol: 4P

Internal Connection

345

Tr2

Tr1

2

1

Publication date: February 2004

Note) The part number in the parenthesis shows conventional part number.

SJJ00115BED

1

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