UTR25 データシートの表示（PDF） - Aeroflex UTMC

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UTR25

UTR 0.8μ Gate Array Family

Aeroflex UTMC 

PHYSICAL DESIGN

Using three layers of metal interconnect, UTMC achieves

optimized layouts that maximize speed of critical nets, overall

chip performance, and design density up to 200,000 equivalent

gates.

Test Capability

UTMC supports all phases of test development from test stim-

ulus generation through high-speed production test. This

support includes ATPG, fault simulation, and fault grading.

Scan design options are available on all UTR 0.8µ storage ele-

ments. In addition, all UTR 0.8µ arrays feature JTAG boundary-

scan (per IEEE Standard 1149.1). Automatic test program de-

velopment capabilities handle large vector sets for use with

UTMC’s LTX/Trillium MicroMasters, supporting high-speed

testing (up to 80MHz with pin multiplexing).

Unparalleled Quality and Reliability

UTMC is dedicated to satisfying the demanding quality and

reliability requirements of aerospace and defense systems sup-

pliers. Quality assurance and reliability programs are integrated

into the entire manufacturing process with Statistical Process

Control (SPC) fully implemented for all manufacturing opera-

tions. These high quality standards have enabled UTMC to offer

product in accordance with:

• MIL-PRF-38535, QML Q and V

• ISO-9001

• Other enhanced reliability flows

Because of numerous product variations permitted with custom-

er specific designs, much of the reliability testing is performed

using a Standard Evaluation Circuit (SEC) and Technology

Characterization Vehicle (TCV). Thus, UTMC can assure high

reliability prior to delivery of product to the customer.

Radiation Hardened

UTMC incorporates radiation-hardening techniques in process

design, design rules, array design, power distribution, and li-

brary element design. All key radiation-hardening process

parameters are controlled and monitored using statistical meth-

ods and in-line testing.

PARAMETER

Total dose

Dose rate upset

Dose rate

survivability

SEU

Projected

neutron fluence

Latchup

RADIATION HARD

1.0E6 rads(Si) functional

1.0E9 rads(Si)/sec

1.0E12 rads(Si)/sec

<1.0E-10 errors per cell-

day

1.0E14 n/sq cm

Latchup-immune over

specified use conditions

NOTES

1

2

3

3,4

Notes:

1. Total dose Co-60 testing is in accordance with MIL-STD-883,

Method 1019. Data sheet electrical characteristics guaranteed to 1.0E6

rads(Si). All post-radiation values measured at 25°C;

IDDQ post-rad limit = 4mA.

2. Short pulse 20ns FWHM (full width, half maximum).

3. May be design dependent, SEU limit based on standard evaluation circuit.

4. SEU-hard flip-flop cell. Non-hard flip-flop typical is 5E-8.

6

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