部品番号
TPC8201
Other PDF
no available.
PDF
page
7 Pages
File Size
339 kB
メーカー
Toshiba
TPC8201 データシート - Toshiba
Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
● Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.)
● High forward transfer admittance : |Yfs| = 6 S (typ.)
● Low leakage current : IDSS = 10 µA (max) (VDS = 30 V)
● Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
部品番号
コンポーネント説明
ビュー
メーカー
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
Share Link: