TK13A65D データシート - Toshiba
メーカー
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Toshiba
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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
Page Link's:
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MOSFETs Silicon N-Channel MOS (U-MOS VII-H)
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2017 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-Channel MOS ( Rev : 2018 )
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba
MOSFETs Silicon N-Channel MOS
Toshiba