SSM6J502NU(2014) データシート - Toshiba
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Toshiba
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Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V)
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba