PTB20202 データシート - Ericsson
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![Ericsson](/logo/Ericsson.png)
Ericsson
![Ericsson](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
• Class A Characteristics
• 1.0 Watt, 470–860 MHz
• -44 dBc Max Two-tone IMD at 1 W(PEP)
• Gold Metallization
• Silicon Nitride Passivated
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