DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
   RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low input capacitance
   Ciss = 2200 pF TYP.
• Built-in gate protection diode