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NJW0281G データシート - Inchange Semiconductor

NJW0281G image

部品番号
NJW0281G

コンポーネント説明

Other PDF
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page
2 Pages

File Size
250.9 kB

メーカー
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 350V(Min)
• Good Linearity of hFE
• Complement to Type NJW0302GD
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Designed for high fidelity audio amplifier and
   other linear applications

 

部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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