部品番号
NESG3031M05-T1
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メーカー
NEC => Renesas Technology
NESG3031M05-T1 データシート - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• LOW NOISE FIGURE AND HIGH-GAIN
NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz
NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
• SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
• M05 PACKAGE:
Flat-lead 4 pin thin-type super minimold package
部品番号
コンポーネント説明
ビュー
メーカー
NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR ( Rev : 2004 )
California Eastern Laboratories.
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