部品番号
NESG2101M05-T1-A
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DESCRIPTION
NECs NESG2101M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER:
P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE:
NF = 0.9 dB at 2 GHz
• HIGH MAXIMUM STABLE POWER GAIN:
MSG = 17 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance