NE3515S02-T1D-A データシート - California Eastern Laboratories.
メーカー
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California Eastern Laboratories.
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X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Laboratories.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
California Eastern Laboratories.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
JUNCTION FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
Silicon Junction Field-Effect Transistor
InterFET
Silicon Junction Field-Effect Transistor
InterFET
Silicon Junction Field-Effect Transistor
InterFET
Silicon Junction Field-Effect Transistor
InterFET
Silicon Junction Field-Effect Transistor
InterFET
Silicon Junction Field-Effect Transistor
InterFET