IXTQ180N055T データシート - IXYS CORPORATION
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IXYS CORPORATION
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Trench Gate Power MOSFET
N-Channel Enhancement Mode
FEATUREs
• International standard packages
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate Power MOSFET
IXYS CORPORATION
Trench Gate MOSFET
Fuji Electric
Trench Gate Power MOSFET HiperFET™
IXYS CORPORATION