Features
• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Low collector to tab capacitance (<25pF)
• Rugged polysilicon gate cell structure
• Fast intrinsic Rectifier
• Low VCE(sat)IGBT and standard diode
   for minimum on-state conduction
   losses
• MOS Gate turn-on for drive simplicity

APPLICATIONs
• Solid state relays
• Capacitor discharge circuits
• High power ignition circuits

Advantages
• Space savings (two devices in one package)
• Reduces assembly time and cost
• High power density