HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface)

N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances

FEATUREs
● Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
● Low drain to tab capacitance(<50pF)
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Fast intrinsic Rectifier

APPLICATIONs
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● AC motor control

Advantages
● Easy assembly
● Space savings
● High power density