IXFC26N50P データシート - IXYS CORPORATION
メーカー
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IXYS CORPORATION
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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
FEATUREs
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
APPLICATIONs
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
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Polar™ Power MOSFET (Electrically Isolated Tab)
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