IRLW640A データシート - Fairchild Semiconductor
メーカー
Fairchild Semiconductor
BVDSS = 200 V
RDS(on) = 0.18Ω
ID = 18 A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 150°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
♦ Lower RDS(ON): 0.145Ω (Typ.)
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Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor