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IRL3705NPBF データシート - Infineon Technologies

IRL3705NPBF image

部品番号
IRL3705NPBF

コンポーネント説明

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9 Pages

File Size
436 kB

メーカー
Infineon
Infineon Technologies Infineon

Description
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

• Logic - Level Gate Drive
• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free

 

部品番号
コンポーネント説明
PDF
メーカー
POWER MOS7® MOSFET
Advanced Power Technology
HEXFET®Power MOSFET
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New Jersey Semiconductor
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HEXFET® Power MOSFET
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