IRFP352 データシート - Samsung
メーカー
![Samsung](/logo/Samsung.png)
Samsung
![Samsung](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
FEATURES
● Low RDS(on)
● Improved Inducttive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3P package
N-Channel Power Mosfets
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL POWER MOSFETS
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
ARTSCHIP ELECTRONICS CO.,LMITED.
N-CHANNEL POWER MOSFETS
New Jersey Semiconductor
N-CHANNEL POWER MOSFETS
Samsung
N-CHANNEL POWER MOSFETS
Samsung
N-CHANNEL POWER MOSFETS
Samsung
N-CHANNEL POWER MOSFETS
Samsung
N-CHANNEL POWER MOSFETS
Samsung
N-CHANNEL POWER MOSFETS
Samsung