IPD068N10N3G データシート - Infineon Technologies
メーカー
![Infineon](/logo/Infineon.png)
Infineon Technologies
![Infineon](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
OptiMOS®3 Power-Transistor ( Rev : 2008 )
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies
OptiMOS®3 Power-Transistor ( Rev : 2009 )
Infineon Technologies
OptiMOS®3 Power-Transistor ( Rev : 2008 )
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies
OptiMOS®3 Power-Transistor ( Rev : 2008 )
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies
OptiMOS®3 Power-Transistor
Infineon Technologies