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IDTAMB0480A5HJG データシート - Renesas Electronics

IDTAMB0480 image

部品番号
IDTAMB0480A5HJG

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16 Pages

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391.6 kB

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Renesas
Renesas Electronics Renesas

DESCRIPTION:
   The fully buffered dual in-line memory module (FB-DIMM) is the next generation memory architecture to meet the growing memory requirement of servers and workstations. The IDT Advanced Memory Buffer (AMB) chip is the essential building block located on each FB-DIMM. The IDT AMB receives commands and data from the host controller to control and write/read data to/ from the DRAMs on the DIMM. Commands and write data are sent southbound from the host controller to AMBs in a daisy chain fashion and interpreted by the target AMB. 


FEATURES:
• Advanced Memory Buffer for Fully buffered DIMMs
• 3.2 and 4 Gbit/s serial speeds (DDR2-533 and 667 DRAM)
• Support for up to eight DIMMs per channel
• Repeater Mode for extending FB-DIMM links
• Northbound and Southbound single lane fail over and channel
   error detection
• Voltage and Timing margin high-speed I/O test capability
• Fully Supports the FB-DIMM configuration register set
• Test features supported include:
   - Integrated thermal sensor and status indicator
   - Supports MEMBIST, IBIST and Virtual Host mode
   - Transparent mode and direct access mode for DRAM testing
• Complies with JEDEC Architecture and Protocol Specification
• Available in 655 ball FCBGA package

EXPANDED FEATURES:
• Wide range DDR Timing Control
• Superfine adjustment for DDR timing
• Wide range of DDR slew rate control
• Slew rate controllable independent of output impedance
• High speed SMBus in test mode
• IBIST IDT PRBS Generator


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