C4390 データシート - SANYO -> Panasonic
メーカー
SANYO -> Panasonic
High-hFE, AF Amplifier Applications
FEATUREs
• Adoption of MBIT process.
• High DC current gain (hFE=800 to 3200).
• Large current capacity (IC=2A).
• Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
• High VEBO (VEBO≥15V).
Silicon NPN epitaxial planar transistor
Panasonic Corporation
Silicon NPN epitaxial planar transistor
Panasonic Corporation
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor ( Rev : V2 )
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Epitaxial Planar Transistor
Sanken Electric co.,ltd.
