3SK321 データシート - Hitachi -> Renesas Electronics
メーカー
Hitachi -> Renesas Electronics
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
APPLICATION
UHF RF amplifier
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-channel dual gate MOS-FET
Philips Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
