3SK297 データシート - Renesas Electronics
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Renesas Electronics
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Features
• Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
• Capable of low voltage operation
APPLICATION
UHF / VHF RF amplifier
Page Link's:
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Silicon N-Channel Dual Gate MOS FET
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Silicon N-Channel Dual Gate MOS FET
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Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET
Hitachi -> Renesas Electronics