2SK3349 データシート - Hitachi -> Renesas Electronics
メーカー
Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA)
RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA)
• 2.5 V gate drive device
• Small package (SMPAK)
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Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
