2SK3080 データシート - Hitachi -> Renesas Electronics
メーカー
![Hitachi](/logo/Hitachi.png)
Hitachi -> Renesas Electronics
![Hitachi](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Features
• Low on-resistance
RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A)
• 4V gate drive devices.
• High speed switching
Page Link's:
1
2
3
4
5
6
7
8
9
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics