2SJ598-Z データシート - NEC => Renesas Technology
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NEC => Renesas Technology
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SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A)
RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A)
•Low Ciss: Ciss= 720 pF TYP.
• Built-in gate protection diode
•TO-251/TO-252 package
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