2SJ588 データシート - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA)
RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA)
• 4 V gate drive device.
Silicon P Channel MOS FET High Speed Switching ( Rev : 2014 )
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching ( Rev : 2003 )
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Renesas Electronics
P-Channel MOS FET / High-Speed Switching
NEC => Renesas Technology
