2SJ551 データシート - Hitachi -> Renesas Electronics
メーカー
Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0.050Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Page Link's:
1
2
3
4
5
6
7
8
9
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
