2SJ543-E(2005) データシート - Renesas Electronics
メーカー
Renesas Electronics
Description
High speed power switching
FEATUREs
• Low on-resistance
RDS (on) = 0.042 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
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Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
Silicon P Channel MOS FET
Renesas Electronics
