2SJ518 データシート - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0.35 Ω typ. at (VGS = –10V, ID = –1A)
• Low drive current
• 4 V gate drive devices
• High speed switching
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More Pages
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
