2SJ517YYTL-E データシート - Renesas Electronics
メーカー
Renesas Electronics
Description
High speed power switching
FEATUREs
• Low on-resistance
RDS (on) = 0.18 Ω typ. (at VGS = –4 V, ID = –1 A)
• Low drive current
• High speed switching
• 2.5 V gate drive devices.
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