2SJ506(L) データシート - Renesas Electronics
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* Low on-resistance
RDS(on)= 0.065 Ωtyp. (at V
GS = –10V, ID= –5A)
* Low drive current
* High speed switching
* 4V gate drive devices.
![2SJ506(L) - Renesas Datasheet 2SJ506(L)](//www.datasheetbank.com/detail-image1/Renesas/2SJ506-DI1.png)
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