DESCRIPTION
The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.

FEATURES
* RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness