datasheetbank_Logo
データシート検索エンジンとフリーデータシート

P/N +説明+コンテンツ検索

検索ワード :
コンポーネント説明 : 72V, Overvoltage-Protection Switches/Limiter Controllers with an External MOSFET

General Description
The MAX6495–MAX6499 is a family of small, low-current, overvoltage-protection circuits for high-voltage transient systems such as those found in automotive and industrial applications. These devices monitor the input voltage and control an external n-channel MOSFET switch to isolate the load at the output during an input overvoltage condition. The MAX6495–MAX6499 operate over a wide supply voltage range from +5.5V to +72V.
The gate of the n-channel MOSFET is driven high while the monitored input is below the user-adjustable over voltage threshold. An integrated charge-pump circuit provides a 10V gate-to-source voltage to fully enhance the n-channel MOSFET. When the input voltage exceeds the user-adjusted overvoltage threshold, the gate of the MOSFET is quickly pulled low, disconnect ing the load from the input. In some applications, dis connecting the output from the load is not desirable. In these cases, the protection circuit can be configured to act as a voltage limiter where the GATE output saw tooths to limit the voltage to the load (MAX6495/MAX6496/MAX6499).
The MAX6496 supports lower input voltages and reduces Power loss by replacing the external reverse battery diode with an external series p-channel MOSFET. The MAX6496 generates the proper bias voltage to ensure that the p-channel MOSFET is on during normal operations. The gate-to-source voltage is clamped during load-dump conditions, and the p-channel MOSFET is off during reverse-battery conditions.
The MAX6497/MAX6498 feature an open-drain, undedicated comparator that notifies the system if the output falls below the programmed threshold. The MAX6497 keeps the MOSFET switch latched off until either the input Power or the SHDN pin is cycled. The MAX6498 will autoretry when VOVSET falls below 130mV.
These devices are available in small, thermally enhanced, 6-pin and 8-pin TDFN packages and are fully specified from -40°C to +125°C.

Features
♦ Wide Supply Voltage Range: +5.5V to +72V
♦ Overvoltage-Protection Switch Controller Allows
   User to Size External n-Channel MOSFETs
♦ Fast Gate Shutoff During Overvoltage with 100mA
   Sink Capability
♦ Internal Charge-Pump Circuit Ensures 10V
   Gate-to-Source Enhancement for Low RDS(ON)
   Performance
♦ n-Channel MOSFET Latches Off After an
   Overvoltage Condition (MAX6497/MAX6499)
♦ Adjustable Overvoltage Threshold
♦ Thermal Shutdown Protection
♦ Supports Series p-Channel MOSFET for Reverse
   Battery Voltage Protection (MAX6496)
♦ POK Indicator (MAX6497/MAX6498)
♦ Adjustable Undervoltage Threshold (MAX6499)
♦ -40°C to +125°C Operating Temperature Range
♦ Small, 3mm x 3mm TDFN Package

Applications
   Automotive
   Industrial
   Telecom/Servers/Networking
   FireWire®
   Notebook Computers

コンポーネント説明 : MOSFET drivers

MOSFET drivers

Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit, improve the efficiency of the MOSFET and enable design flexibility.

Key features
- Complete MOSFET driving functionality in
   one package
- Several configurations available

Key benefits
- Improved MOSFET efficiency by
   • Minimizing rise and fall time
   • Fast gate (dis-)charge of the driven
      MOSFET
- Takes load from the driving circuit
   and thus minimizes the IC Power dissipation
- More design flexibility: the control IC and
   the MOSFET do not have to be placed as
   close as possible anymore
- Cost-effective alternative to IC-solutions

Key applications
- MOSFET driver
- Bipolar Power transistor driver
- Push-pull driver

部品番号(s) : AN605
Vishay
Vishay Semiconductors
コンポーネント説明 : Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit

INTRODUCTION
Power MOSFETs have become the standard choice as the main switching device for low-voltage (<200 V) switchmode Power-supply (SMPS) converter applications. However using manufacturers’ datasheets to choose or size the correct device for a specific circuit topology is becoming increasingly difficult. The main criteria for MOSFET selection are the Power loss associated with the MOSFET (related to the overall efficiency of the SMPS) and the Power-dissipation capability of the MOSFET (related to the maximum junction temperature and thermal performance of the package). This application note focuses on the basic characteristics and understanding of the MOSFET.

There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental basis of the device structure before the MOSFET behavior can be explained. This application note details the basic structure of the Trench MOSFET structure, identifying the parasitic components and defining related terminology. It also describes how and why the parasitic parameters occur.

部品番号(s) : FDPF8N60ZUT
Fairchild
Fairchild Semiconductor
コンポーネント説明 : N-Channel UniFET™ II Ultra FRFET™ MOSFET

Description
UniFET™ II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFET™ MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching Power converter applications such as Power factor correction (PFC), flat panel display (FPD) TV Power, ATX and electronic lamp ballasts.

Features
• RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant

Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply

部品番号(s) : FDPF5N50NZU
Fairchild
Fairchild Semiconductor
コンポーネント説明 : N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 3.9 A, 2.0 

Description
UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. UniFET II Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switch ing Power converter applications such as Power factor correction (PFC), flat panel display (FPD) TV Power, ATX and electronic lamp ballasts.

Features
• RDS(on) = 1.7Ω (Typ.) @ VGS = 10 V, ID = 1.95 A
• Low Gate Charge (Typ. 9 nC)
• Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant

Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply

部品番号(s) : FDPF5N50NZF FDPF5N50NZFT
Fairchild
Fairchild Semiconductor
コンポーネント説明 : N-Channel UniFET™ II FRFET® MOSFET500 V, 4.2 A, 1.75 Ω

Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching Power converter applications such as Power factor correction (PFC), flat panel display (FPD) TV Power, ATX and electronic lamp ballasts.

Features
• RDS(on) = 1.57Ω (Typ.) @ VGS = 10 V, ID = 2.1 A
• Low Gate Charge (Typ. 9 nC)
• Low Crss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant

Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply

部品番号(s) : YDA135 YDA135-VZ
Yamaha
Yamaha Corporation
コンポーネント説明 : STEREO 5W-20W DIGITAL AUDIO Power AMPLIFIER CONTROLLER

Outline
YDA135 is digital audio Power amplifier controller IC that is output Power of 20W/channel on a 12V Power supply operation.
This IC is combined with the general purpose Power MOSFET (hereafter called Power MOSFET) that are connected through BTL can configure an audio Power amplifier with output Power of 5W or 20W. This IC accepts analog signal, converts it into digital pulse signal by the digital modulation circuitry and outputs the digital pulse signal for driving Power MOSFET. The Power MOSFET that is driven by this IC outputs large current digital pulses. The digital pulse signal is converted to audio signal through an external low pass filter, and sent to the speakers.

By using a general purpose Power MOSFET, very low cost digital amplifier system is configured. By adapting Yamaha's proprietary modulation system, the device provides low distortion and high signal to noise ratio at the highest level among digital amplifiers in the equiralent class.
This IC has the overcurrent detection function that detects overcurrent state by voltage drop of external resistors that detects the output current.
This IC has the high temperature detection function that detects high temperature by resistor value change of external element that detects temperature.

The operation of this IC is limited by using two control signal, SLEEP or MUTE. SLEEP signal stops all functions of this IC, and restrain to the Power consumption at the minimum. MUTE signal brings Power MOSFET into nonconductive state, and mute the output of the device.
This IC is configured by two Power supply ; 5V for signal processing circuits, and 12V for Power MOSFET driving circuits.

 

部品番号(s) : MLD1N06CL
Motorola
Motorola => Freescale
コンポーネント説明 : SMARTDISCRETES Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

SMARTDISCRETES Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

The MLD1N06CL is designed for applications that require a rugged Power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in–rush current or a shorted load condition could occur.
This logic level Power MOSFET features current limiting for short circuit protection, integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping for over–voltage protection and Sensefet technology for low on–resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate–Source and Gate–Drain clamps allow the device to be applied without use of external transient suppression components. The Gate–Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature. The MLD1N06CL is fabricated using Motorola’s SMARTDISCRETES™ technology which combines the advantages of a Power MOSFET output device with the on–chip protective circuitry that can be obtained from a standard MOSFET process. This approach offers an economical means of providing protection to Power MOSFETs from harsh automotive and industrial environments. SMARTDISCRETES devices are specified over a wide temperature range from –50°C to 150°C.

部品番号(s) : MLD2N06CL
Motorola
Motorola => Freescale
コンポーネント説明 : Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET

VOLTAGE CLAMPED CURRENT LIMITING MOSFET 62 VOLTS (CLAMPED) RDS(on) = 0.4 OHMS

The MLD2N06CL is designed for applications that require a rugged Power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in–rush current or a shorted load condition could occur. This logic level Power MOSFET features current limiting for short circuit protection, integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping for over–voltage protection and Sensefet technology for low on–resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate–Source and Gate–Drain clamps allow the device to be applied without use of external transient suppression components. The Gate–Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature. The MLD2N06CL is fabricated using Motorola’s SMARTDISCRETES technology which combines the advantages of a Power MOSFET output device with the on–chip protective circuitry that can be obtained from a standard MOSFET process. This approach offers an economical means of providing protection to Power MOSFETs from harsh automotive and industrial environments. SMARTDISCRETES devices are specified over a wide temperature range from –50°C to 150°C.

部品番号(s) : FDPF12N50UT
Fairchild
Fairchild Semiconductor
コンポーネント説明 : N-Channel UniFET™ Ultra FRFET™ MOSFET

Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching Power converter applications such as Power factor correction (PFC), flat panel display (FPD) TV Power, ATX and electronic lamp ballasts.

Features
• RDS(on) = 650 m (Typ.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant

Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply

12345678910 Next