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Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

Description

The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is manufactured by creating a single metal mask to connect the components. This allows the designer to deal with only one mask for the IC layout instead of the actual 10 mask process.

Features

Size (single tile)

• 87 x 75 mils Expandability of array (to 2 or 4 tiles)

Component Availability (single tile)

• Small NPN 48

• Dual collector PNP 21

• Vertical PNP 4

• Power NPN 3

• Diffused Resistors (total) ≈300 kΩ

• Pinch Resistors (3-terminal, 30kΩ) 8

• Cross-unders 13

• Buses 6

Basic Electrical Specs

• transistor Matching (NPN & PNP) <2%

• Primary voltage limitations:

   LVCEO 18 V

   BVCBO 30 V

• Diffusion to substrate

   (Ground) 30 V

• NPN Parameters

   Beta 80–500

   fT(1mA) 300 MHz

   BVEBO 7 V

• PNP Parameters:

   Beta 20–300

   fT(1mA) 300 MHz

   BVEBO 30 V

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE transistor

High Voltage NPN transistor For General Purpose And Telephony Applications.

STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and
   N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
   (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

NPN Epitaxial Silicon transistor

High Voltage transistor

transistor (NPN)

FEATURES
● High Voltage transistor

NPN EPITAXIAL SILICON transistor

HIGH VOLTAGE transistor

transistor(NPN)

FEATURES
● High Voltage transistor