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部品番号(s) : LED34-HIGH-SMD5
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
コンポーネント説明 : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm

部品番号(s) : LED34-HIGH-SMD3
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
コンポーネント説明 : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD3 has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 3x3 mm

部品番号(s) : LED34-HIGH-SMD5R
Roithner LaserTechnik GmbH
Roithner LaserTechnik GmbH
コンポーネント説明 : Mid-Infrared Light Emitting Diode, SMD

Mid-Infrared Light Emitting Diode, SMD

Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours.

Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector

Astec Semiconductor => Silicon Link
Astec Semiconductor => Silicon Link
コンポーネント説明 : Semicustom Bipolar Array

Description

The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is manufactured by creating a single metal mask to connect the components. This allows the designer to deal with only one mask for the IC layout instead of the actual 10 mask process.



Features

Size (single tile)

• 87 x 75 mils Expandability of array (to 2 or 4 tiles)

Component Availability (single tile)

• Small NPN 48

• Dual collector PNP 21

• Vertical PNP 4

• Power NPN 3

• Diffused Resistors (total) ≈300 kΩ

• Pinch Resistors (3-terminal, 30kΩ) 8

• Cross-unders 13

• Buses 6



Basic Electrical Specs

transistor Matching (NPN & PNP) <2%

• Primary voltage limitations:

   LVCEO 18 V

   BVCBO 30 V

• Diffusion to substrate

   (Ground) 30 V

NPN Parameters

   Beta 80–500

   fT(1mA) 300 MHz

   BVEBO 7 V

• PNP Parameters:

   Beta 20–300

   fT(1mA) 300 MHz

   BVEBO 30 V


部品番号(s) : 2N5551
Boca Semiconductor
Boca Semiconductor
コンポーネント説明 : NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE transistor

NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE transistor

High Voltage NPN transistor For General Purpose And Telephony Applications.

部品番号(s) : 8H02 TPCP8H02 8H02 TPCP8H02
Toshiba
Toshiba
コンポーネント説明 : TOSHIBA Multi-Chip transistor Silicon NPN Epitaxial Type, Field Effect transistor Silicon N Channel MOS Type

STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and
   N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
   (NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

Fairchild Semiconductor
Fairchild Semiconductor
コンポーネント説明 : NPN Epitaxial Silicon transistor

NPN Epitaxial Silicon transistor

High Voltage transistor

部品番号(s) : MMBT5550
Jiangsu Changjiang Electronics Technology Co., Ltd
Jiangsu Changjiang Electronics Technology Co., Ltd
コンポーネント説明 : SOT-23 Plastic-Encapsulate transistors

transistor (NPN)

FEATURES
● High Voltage transistor

部品番号(s) : MMBT5550
Samsung
Samsung
コンポーネント説明 : NPN EPITAXIAL SILICON transistor

NPN EPITAXIAL SILICON transistor

HIGH VOLTAGE transistor

部品番号(s) : MMBT5550
Shenzhen Jin Yu Semiconductor Co., Ltd.
Shenzhen Jin Yu Semiconductor Co., Ltd.
コンポーネント説明 : transistor(NPN)

transistor(NPN)

FEATURES
● High Voltage transistor

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