Dual Cool™ packaging technology, provides both bottom- and top-side Cooling in a PQFN package. Not only is the PQFN footprint an industry standard, it provides the designer with performance ﬂexibility. With enhanced dual path thermal performance and improved parasitics over its wire-bonded predecessors, the use of a heat sink with Dual Cool packaging technology provides even more impressive results. Test results prove that, when a heat sink is used with our Dual Cool package technology, synchronous buck converters deliver higher output current and increased Power density. With Fairchild’s trench silicon technology, Dual Cool packaging technology proves to be a clear leader in Power density and thermal performance. Our Dual Cool package solutions are lead free and RoHS compliant and are available in 3.3 mm x 3.3 mm and 5 mm x 6 mm PQFN packages.
Features • Top-side Cooling, lower thermal resistance from junction to top • Same land pattern as 5 mm x 6 mm and 3.3 mm x 3.3 mm PQFN – JEDEC standard • Allows higher current and Power dissipation • Highest Power density for DC-DC applications • Use with or without a heat sink, reduces the number of qualifed components in the BOM • Multiple suppliers without cross licensing requirements • High degree of production commonality with standard PQFN packaging • 25 V - 150 V portfolio
Applications • Point-of-load (POL) synchronous-buck conversion • Servers • Telecommunications, routing and switching • Heat path from top only
Description The PI2002 Cool-ORingTM solution is a high-speed Active ORing controller IC with a load disconnect feature designed for use with back-to-back Nchannel MOSFETs in redundant Power system architectures. The PI2002 Cool-ORing controller enables an extremely low Power loss solution with fast dynamic response to fault conditions, critical for high availability systems. The PI2002 controls backto-back MOSFETs providing true bi-directional switch capabilities to protect against both Power source and load fault conditions.
Features • Power Source & Load Fault Protection • Fast Dynamic Response, with 120ns reverse & 150ns forward over-current turn-off delay time • 4A gate discharge current • Accurate back-to-back MOSFETs drain-to-drain voltage sensing to indicate system level fault conditions • Programmable under & over-voltage detection • Over temperature fault detection • Programmable over-current Gate off time • Programmable short circuit load detection function • Active low fault flag output
Applications • N+1 Redundant Power Systems • Servers & High End Computing • Telecom Systems • Active ORing with Load Disconnect • High current Active ORing
Description The PI2001 Cool-ORingTM solution is a universal high-speed Active ORing controller IC designed for use with N-channel MOSFETs in redundant Power system architectures. The PI2001 Cool-ORing controller enables an extremely low Power loss solution with fast dynamic response to fault conditions, critical for high availability systems. The PI2001 controls single or parallel MOSFETs to address Active ORing applications protecting against Power source failures. The PI2001 can be used in either high-side or low-side Active ORing applications and a master/slave feature allows the paralleling of IC/MOSFET chipsets for high current Active ORing.
Features • Fast Dynamic Response to Power Source failures, with 160ns reverse current turn-off delay time • 4A gate discharge current • Accurate MOSFET drain-to-source voltage sensing to indicate system level fault conditions • Programmable under & over-voltage detection • Over temperature fault detection • Adjustable reverse current blanking timer • 100V for 100ms operation in low side applications • Master/Slave I/O for paralleling (TDFN only) • Active low fault flag output
Applications • N+1 Redundant Power Systems • Servers & High End Computing • Telecom Systems • Low & High-side Active ORing • High current Active ORing
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance