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P4C187 データシートの表示(PDF) - Performance Semiconductor

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P4C187
Performance-Semiconductor
Performance Semiconductor Performance-Semiconductor
P4C187 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
P4C187/187L
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol Parameter
–10
–12
–15
–20
–25
–35
–45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
tRC
Read Cycle Time 10
12
15
20
25
35
45
ns
t
Address Access
AA
Time
10
12
15
20
25
35
45 ns
tAC
Chip Enable
Access Time
10
12
15
20
25
35
45 ns
tOH
Output Hold from 2
2
2
2
2
2
2
ns
Address Change
tLZ
Chip Enable to
2
2
2
2
2
2
2
ns
Output in Low Z
t
HZ
Chip Disable to
5
6
8
10
12
17
20 ns
Output in High Z
tPU
Chip Enable to
0
0
0
0
0
0
0
ns
Power Up Time
t
Chip Disable to
10
12
15
20
25
35
45 ns
PD
Power Down Time
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
(8)
t RC
ADDRESS
DATA OUT
t AA
t OH
PREVIOUS DATA VALID
DATA VALID
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
tRC
CE
DATA OUT
VCC SUPPLY I CC
CURRENT I SB
t AC
(7)
t LZ
t PU
tHZ (7)
DATA VALID
t PD
HIGH IMPEDANCE
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
58

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